購物車0制造商:TI
The LF298 and LFx98x devices are monolithic sample-and-hold circuits that use BI-FET technology to obtain ultrahigh DC accuracy with fast acquisition of signal and low droop rate. Operating as a unity-gain follower, DC gain accuracy is 0.002% typical and acquisition time is as low as 6 μs to 0.01%. A bipolar input stage is used to achieve low offset voltage and wide bandwidth. Input offset adjust is accomplished with a single pin and does not degrade input offset drift. The wide bandwidth allows the LF198-N to be included inside the feedback loop of 1-MHz operational amplifiers without having stability problems. Input impedance of 1010 Ω allows high-source impedances to be used without degrading accuracy.
P-channel junction FETs are combined with bipolar devices in the output amplifier to give droop rates as low as 5 mV/min with a 1-μF hold capacitor. The JFETs have much lower noise than MOS devices used in previous designs and do not exhibit high temperature instabilities. The overall design ensures no feedthrough from input to output in the hold mode, even for input signals equal to the supply voltages.
Logic inputs on the LF198-N are fully differential with low input current, allowing for direct connection to TTL, PMOS, and CMOS. Differential threshold is
1.4 V. The LF198-N will operate from ±5-V to ±18-V supplies.
An A version is available with tightened electrical specifications.
Operates from ±5-V to ±18-V Supplies
Less than 10-μs Acquisition Time
Logic Input Compatible With TTL, PMOS, CMOS
0.5-mV Typical Hold Step at Ch = 0.01 μF
Low Input Offset
0.002% Gain Accuracy
Low Output Noise in Hold Mode
Input Characteristics Do Not Change During Hold Mode
High Supply Rejection Ratio in Sample or Hold
Wide Bandwidth
Space Qualified, JM38510





LF398-N 封裝圖

LF398-N 封裝圖

LF398-N電路圖

LF398-N 引腳圖
| 型號 | 制造商 | 描述 | 購買 |
|---|---|---|---|
| LF398N/NOPB | TI | LF398-N 單片采樣保持電路(10μs 采集,7mV 失調(diào)電壓) | 立即購買 |
| LF398M | TI | 立即購買 | |
| LF398AN/NOPB | TI | 采樣和保持 放大器 1 電路 8DIP | 立即購買 |
| LF398M/NOPB | TI | LF398-N 單片采樣保持電路(10μs 采集,7mV 失調(diào)電壓) | 立即購買 |
| LF398MX/NOPB | TI | LF398-N 單片采樣保持電路(10μs 采集,7mV 失調(diào)電壓) | 立即購買 |
| ? | - | - | 立即購買 |
峰值電壓采樣保持電路:峰值電壓采樣保持電路如圖12-50所示。峰值電壓采樣保持電路南一片采樣保持器芯片LF398和一塊電壓比較器LM311構(gòu)成。LF398的輸出電壓和輸入電壓通過LM3J1進(jìn)行比較t當(dāng)U.》Uo時.
由于成本上的優(yōu)勢,目前市場上的NAND閃存主流已經(jīng)變成了TLC、QLC,MLC都很罕見了,SLC閃存更是鳳毛麟角,消費(fèi)級市場上幾乎消失了。
OptiMOS? 5 Linear FET 2, 100 V IPT017N10NM5LF2 MOSFET深度解析 作為電子工程師,我們在設(shè)計中常常需要挑選合適的MOSFET來滿足特定的應(yīng)用需求
意法半導(dǎo)體 STL320N4LF8 N溝道STripFET F8功率MOSFET 采用STripFET F8溝槽式MOSFET技術(shù)制造而成。 該器件完全符合工業(yè)級標(biāo)準(zhǔn)。STL320N4LF8可降低
意法半導(dǎo)體STL325N4LF8AG N溝道功率MOSFET采用STripFET F8技術(shù),具有增強(qiáng)型溝槽柵極結(jié)構(gòu)。 STL325N4LF8AG可確保非常低的導(dǎo)通電阻。該器件還降低內(nèi)部電容和柵極電荷,實現(xiàn)更快、更高效的開關(guān)。
摘要 :本文介紹了一種以采樣/ 保持器 L F398 芯片為主要器件的峰值保持電路。該電路具有結(jié)構(gòu)簡單、調(diào)試方便、性能優(yōu)良等優(yōu)點(diǎn) ,可廣泛應(yīng)用于各種脈沖分析系統(tǒng)。
兩個采樣保持放大器LF398構(gòu)成的階梯波發(fā)生電路圖 如圖所示為由兩個LF398構(gòu)成的階梯波發(fā)生電路。初始狀態(tài):兩個
lf198/lf298/lf398應(yīng)用電路
| LC88FC2F0B | LM2904S | LV8805SV | LMP90077 |
| LC05711ARA | lf398 | LMH6723 | LM324 |
| LMK61E2 | LC75878W | LB1937T | LB1868M |
| LC75818PT | LMV331 | LB1867M | LB1876 |
| LMH6702 | LM7912 | LMK04816 | LB11922 |