描述The LMG3410 Single-Channel Gallium-Nitride(GaN) Power Stage contains a 70-mΩ, 600-V GaN power transistor and specialized driver in an 8-mm by8-mm QFN package. Our Direct Drive architecture is used to create a normally-off device whileproviding the native switching performance of the GaN power transistor. When the LMG3410 isunpowered, an integrated low-voltage silicon MOSFET turns the GaN device off via its source. Innormal operation, the low-voltage silicon MOSFET is held on continuously while the GaN device isgated directly from an internally-generated negative voltage supply.The integrated driver provides additional protection and convenience features. Fastover-current, over-temperature and under-voltage lockout (UVLO) protections help create a fail-safesystem; the device?s status is indicated by the FAULT output. An internal5-V low-dropout regulator can provide up to 5 mA to supply external signal isolators. Finally,externally-adjustable slew rate and a low-inductance QFN package minimize switching loss, drainringing, and electrical noise generation.特性Integrated 70-mΩ, 600-V GaN and Driver Single Package for Ease of Design and LayoutUp to 1 MHzSteady-State Operation20-ns Typical Propagation Delay Operates From a Single Unregulated 12-V SupplyExternally-Adjustable Drive Strength for Switching Performance and EMIControlSupports 25 to 100 V/nsIntegrated DC-DC Converter for Negative DriveVoltage Fault Output Ensures SafetyUVLO Protection Over-Current Protection Over-Temperature ProtectionHigh Edge-Rate Tolerance All trademarks are the property of their respective owners.