TC7920 consists of two pairs of high voltage, low threshold N-channel and P-channel MOSFETs in a 12-Lead DFN package. All MOSFETs have integrated the output drain high voltage diodes, gate-to-source resistors and gate-to-source Zener diode clamps which are desired for high voltage pulser applications. The complimentary, high-speed, high voltage, gate-clamped N and P-channel MOSFET pairs utilize an advanced vertical DMOS structure andwell-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices.Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown.vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input and output capacitance, and fast switching speeds are desired.

  High voltage Vertical DMOS technology

  Integrated drain output high voltage diodes

  Integrated gate-to-source resistor

  Integrated gate-to-source Zener diode

  Low threshold, Low on-resistance

  Low input & output capacitance

  Fast switching speeds

  Electrically isolated N- and P-MOSFET pairs