The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.

Especially suited for use in specific bridge-less topologies, this dual 650 V rectifier will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.

碳化硅二極管是一種超高性能的功率肖特基二極管。它是使用碳化硅襯底制造的。寬禁帶材料允許的肖特基二極管結(jié)構(gòu)的設計與650伏的評級。由于肖特基結(jié)構(gòu)，沒有恢復被證明在關(guān)斷和鈴聲模式是可以忽略不計。最小的電容關(guān)斷行為是獨立的溫度。

特別適合于使用在特定的橋少的拓撲結(jié)構(gòu)，這種雙650伏整流器將提高在硬開關(guān)條件下的性能。它的高正向浪涌能力，保證了良好的魯棒性，在暫態(tài)階段。

Key Features

• No or negligible reverse recovery

• Switching behavior independent of temperature

• Suited for specific bridge-less topologies

• High forward surge capability

• Insulated package:

• Capacitance: 7 pF

• Insulated voltage: 2500 V rms

主要特點

沒有或可以忽略不計的反向恢復

溫度開關(guān)行為

適用于特定的橋梁，較少的拓撲結(jié)構(gòu)

高正向浪涌能力

絕緣包：

電容：7

絕緣電壓：2500伏均方根