The STMicroelectronics STW82103B is an integrated down converter providing 8 dB of gain, 10.5 dB NF, and a very high input linearity by means of its passive mixer.

Embedding two wide band auto calibrating VCOs and an integer-N synthesizer, the STW82103B is suitable for both Rx and Tx requirements for Cellular infrastructure equipment.

The integrated RF balun and internal matching permit direct 50 ohm single-ended interface to RF port. The IF output is suitable for driving 200-ohm impedance filters.

By embedding a DAC with dual current output to drive an external PIN diode attenuator, the STW82103B replaces several costly discrete components and offers a significant footprint reduction.

The STW82103B device is designed with STMicroelectronics advanced 0.35 μm SiGe process. Its performance is specified over a -40 °C to +85 °C temperature range.

意法半導(dǎo)體的stw82103b是一個(gè)集成的下變頻器提供的增益8 dB，10.5 dB NF，并通過(guò)其無(wú)源混頻器的輸入線(xiàn)性度很高。

嵌入兩寬帶自動(dòng)校準(zhǔn)振蕩器和一個(gè)整數(shù)N合成器的stw82103b適用于RX和TX要求蜂窩基礎(chǔ)設(shè)施設(shè)備。

集成RF巴倫和內(nèi)部匹配允許直接50歐姆單端接口的射頻端口。如果輸出是適用于驅(qū)動(dòng)200歐姆阻抗濾波器。

通過(guò)嵌入一個(gè)DAC雙電流輸出驅(qū)動(dòng)外部PIN二極管衰減器，其stw82103b取代一些昂貴的分立元件，提供了一個(gè)重大的減排。

的stw82103b裝置設(shè)計(jì)與意法半導(dǎo)體先進(jìn)的0.35μm SiGe工藝。其性能在40°C至85°C的溫度范圍內(nèi)。

Key Features

• High linearity:

• IIP3: +25 dBm

• 2FRF-2FLO spurious rejection: 80 dBc

• Noise figure:

• NF: 10.5 dB

• Conversion gain

• CG: 8 dB

• RF range: 2300 MHz to 2700 MHz

• Wide IF amplifier frequency range: 70 MHz to 400 MHz

• Integrated RF balun with internal matching

• Dual differential integrated VCOs with automatic center frequency calibration:

• LOA: 2200 to 2550 MHz

• LOB: 2500 to 3000 MHz

• Embedded integer-N synthesizer

• Dual modulus programmable prescaler (16/17 or 19/20)

• Programmable reference frequency divider (10 bits)

• Adjustable charge pump current

• Digital lock detector

• Excellent integrated phase noise

• Fast lock time: 150 μs

• Integrated DAC with dual current output

• Supply: 3.3 V and 5 V analog, 3.3 V digital

• Dual digital bus interface: SPI and I²C bus (fast mode) with 3 bit programmable address (1101A₂A₁A₀)

• Process: 0.35 μm BICMOS SiGe

• Operating temperature range -40 to +85^oC

• 44-lead exposed pad VFQFPN package 7x7x1.0 mm

• Applications

• Cellular infrastructure equipment:

  IF sampling receiversDigital PA linearization loops

• Other wireless communication systems.

主要特點(diǎn)

高線(xiàn)性度：

：25 dBm的IIP3

2frf-2flo雜散抑制：80 dBc

噪聲系數(shù)：

核因子：10.5分貝

轉(zhuǎn)換增益

答：8分貝

射頻范圍：2300兆赫至2700兆赫

寬中頻放大器的頻率范圍：70兆赫至400兆赫

內(nèi)部匹配的集成RF巴倫

自動(dòng)校準(zhǔn)雙差的集成VCO的中心頻率：

羅亞：2200至2550兆赫

高球：2500至3000兆赫

嵌入式數(shù)字頻率合成器

雙模量可編程分頻器（16 / 17或19 / 20）

可編程參考分頻器（10位）

可調(diào)電荷泵電流

數(shù)字鎖相檢測(cè)器

良好的綜合相位噪聲

快速鎖定時(shí)間：150

雙電流輸出DAC集成

供應(yīng)：3.3伏和5伏模擬，3.3伏數(shù)字

雙數(shù)字總線(xiàn)接口：SPI和I2C總線(xiàn)（快速模式）與3位可編程的地址（1101a2a1a0）

方法：0.35μm BiCMOS SiG

工作溫度范圍40到85oC

44鉛接觸墊vfqfpn包7x7x1.0毫米

應(yīng)用

蜂窩基礎(chǔ)設(shè)施設(shè)備：中頻采樣receiversdigital功放線(xiàn)性化環(huán)路

其他無(wú)線(xiàn)通信系統(tǒng)。